Title :
CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction
Author :
Coss, Brian E. ; Loh, Wei-Yip ; Oh, Jungwoo ; Smith, Greg ; Smith, Casey ; Adhikari, Hemant ; Sassman, Barry ; Parthasarathy, Srivatsan ; Barnett, Joel ; Majhi, Prashant ; Wallace, Robert M. ; Kim, Jiyoung ; Jammy, Raj
Abstract :
We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO2/high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlOx/SiO2 and LaOx/SiO2, respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.
Keywords :
Schottky barriers; aluminium compounds; contact resistance; lanthanum compounds; silicon compounds; valence bands; AlO-SiO2; CMOS band-edge Schottky barrier heights; LaO-SiO2; conduction band-edge; dielectric-dipole mitigated scheme; effective dipole modulation; source/drain contact resistance; valence band-edge; Atherosclerosis; Contact resistance; Dielectric substrates; Distributed decision making; Electrical resistance measurement; Electrons; Schottky barriers; Silicides; Spectroscopy; Thickness measurement; Schottky barrier height; dipoles; high-κ;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
