CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction

Author

Coss, Brian E. ; Loh, Wei-Yip ; Oh, Jungwoo ; Smith, Greg ; Smith, Casey ; Adhikari, Hemant ; Sassman, Barry ; Parthasarathy, Srivatsan ; Barnett, Joel ; Majhi, Prashant ; Wallace, Robert M. ; Kim, Jiyoung ; Jammy, Raj

fYear

2009

fDate

16-18 June 2009

Firstpage

104

Lastpage

105

Abstract

We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO₂/high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlO_x/SiO₂ and LaO_x/SiO₂, respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.

Keywords

Schottky barriers; aluminium compounds; contact resistance; lanthanum compounds; silicon compounds; valence bands; AlO-SiO₂; CMOS band-edge Schottky barrier heights; LaO-SiO₂; conduction band-edge; dielectric-dipole mitigated scheme; effective dipole modulation; source/drain contact resistance; valence band-edge; Atherosclerosis; Contact resistance; Dielectric substrates; Distributed decision making; Electrical resistance measurement; Electrons; Schottky barriers; Silicides; Spectroscopy; Thickness measurement; Schottky barrier height; dipoles; high-κ;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2009 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-3308-7

Type

conf

Filename

5200650