DocumentCode
497215
Title
Analysis of extra VT variability sources in NMOS using Takeuchi plot
Author
Tsunomura, T. ; Nishida, A. ; Yano, F. ; Putra, A.T. ; Takeuchi, K. ; Inaba, S. ; Kamohara, S. ; Terada, K. ; Mama, T. ; Hiramoto, T. ; Mogami, T.
Author_Institution
MIRAI-Selete, Tsukuba, Japan
fYear
2009
fDate
16-18 June 2009
Firstpage
110
Lastpage
111
Abstract
Extra VT variability sources in NMOS are investigated using Takeuchi plot. It is clearly shown that VT variation of boron channel NMOS cannot be explained solely by the channel depth profiles. Moreover it is clarified that boron TED is the dominant source of the extra NMOS VT variability. By suppressing the effect of boron TED with backward substrate bias, VT variation of boron channel NMOS comes close to that of phosphorus channel PMOS.
Keywords
MOSFET; diffusion; NMOS; PMOS; Takeuchi plot; VT variation; channel depth profiles; transient enhanced diffusion; Boron; Fluctuations; MOS devices; MOSFETs; Resource description framework; Shape; TED; VT variation; boron; channel dopant;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2009 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-3308-7
Type
conf
Filename
5200652
Link To Document