• DocumentCode
    497218
  • Title

    A new methodology for evaluating VT variability considering dopant depth profile

  • Author

    Putra, A.T. ; Tsunomura, T. ; Nishida, A. ; Kamohara, S. ; Takeuchi, K. ; Inaba, S. ; Terada, K. ; Hiramoto, T.

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    116
  • Lastpage
    117
  • Abstract
    A new normalization method of VT variability in terms of dopant depth profile is developed and applied to measured variation data of MOSFETs with four types of channel dopant (B, Sb, P, As) with different depth profiles. The normalized coefficient shows a constant value indicating the validity of the method. However, it is shown that only B has much larger coefficient, suggesting B has some extra origins of variability.
  • Keywords
    MOSFET; doping profiles; As; B; MOSFET; P; Sb; VT variability; dopant depth profile; Boron; Channel bank filters; Digital video broadcasting; Electronic mail; Equations; Fluctuations; MOSFETs; Resource description framework; Uncertainty; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2009 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-3308-7
  • Type

    conf

  • Filename
    5200655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497218