Title :
A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits
Author_Institution :
Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai, Japan
Abstract :
Magnetic tunnel junction (MTJ), a spintronics device, offers nonvolatile memory capable of fast-read/write with high endurance together with back end of the line (BEOL) compatibility. These features combined with the CMOS technology offer not only a non-volatile, high density, and fast random access memory, but also a possibility of constructing a CMOS logic circuit having unprecedented low power capability and compactness. The author describe here the development of MTJ, in particular the giant tunnel magnetoresistance of MgO-barrier MTJ and current-induced magnetization switching, basic hybrid CMOS/MTJ circuits, and prospects of the current approach along with the remaining challenges.
Keywords :
CMOS memory circuits; MRAM devices; logic circuits; magnesium compounds; magnetic tunnelling; magnetoelectronics; CMOS logic circuit; MgO; back end of the line compatibility; current-induced magnetization switching; giant tunnel magnetoresistance; hybrid CMOS; magnetic tunnel junction; nonvolatile integrated circuits; nonvolatile memory; spintronics device; CMOS integrated circuits; CMOS logic circuits; CMOS memory circuits; CMOS technology; Hybrid integrated circuits; Integrated circuit technology; Magnetic tunneling; Magnetoelectronics; Nonvolatile memory; Random access memory; MTJ; hybrid MTJ/CMOS; logic-in-memory circuit; nonvolatility; spintronics;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
