• DocumentCode
    497241
  • Title

    Programming characteristics of the steep turn-on/off feedback FET (FBFET)

  • Author

    Yeung, Chun Wing ; Padilla, Alvaro ; Liu, Tsu-Jae King ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    176
  • Lastpage
    177
  • Abstract
    The feedback FET is a new steep turn-on/off transistor which achieves six-orders-of-magnitude current change within a 2 mV gate voltage step (0.35 mV/decade). This device requires an initial programming or conditioning step. Its threshold voltage may be adjusted by Fowler-Nordheim or hot-carrier charge injection. Programming and operation of the device is explained with simulation and experimental data.
  • Keywords
    field effect transistors; hot carriers; Fowler-Nordheim; feedback FET; hot-carrier charge injection; programming characteristics; steep turn-on/off transistor; voltage 2 mV; FETs; Feedback;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2009 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-3308-7
  • Type

    conf

  • Filename
    5200678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497241