Title :
Programming characteristics of the steep turn-on/off feedback FET (FBFET)
Author :
Yeung, Chun Wing ; Padilla, Alvaro ; Liu, Tsu-Jae King ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
The feedback FET is a new steep turn-on/off transistor which achieves six-orders-of-magnitude current change within a 2 mV gate voltage step (0.35 mV/decade). This device requires an initial programming or conditioning step. Its threshold voltage may be adjusted by Fowler-Nordheim or hot-carrier charge injection. Programming and operation of the device is explained with simulation and experimental data.
Keywords :
field effect transistors; hot carriers; Fowler-Nordheim; feedback FET; hot-carrier charge injection; programming characteristics; steep turn-on/off transistor; voltage 2 mV; FETs; Feedback;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
