• DocumentCode
    49784
  • Title

    GaAs Fabry-Perot cavity photoconductors: switching with picojoule optical pulses

  • Author

    Peytavit, Emilien ; Formont, Stephane ; Lampin, Jean-Francois

  • Author_Institution
    Inst. d´Electron. de Microelectron. et de Nanotechnol., Univ. de Lille1, Villeneuve d´Ascq, France
  • Volume
    49
  • Issue
    3
  • fYear
    2013
  • fDate
    Jan. 31 2013
  • Firstpage
    207
  • Lastpage
    208
  • Abstract
    It is shown that low-temperature-grown GaAs photoconductors using a Fabry-Pérot cavity are very efficient optical switches in comparison with planar photoconductors. A switching efficiency of about 60́ was measured with a pulse energy as low as 1.2 pJ and about 100́ efficiency is achieved with a pulse energy of 14.2 pJ. Efficient optical sampling of microwave signals is now achievable with a low power pulsed laser.
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; gallium arsenide; laser cavity resonators; laser mode locking; microwave photonics; optical switches; photoconducting materials; photoconducting switches; GaAs; energy 14.2 pJ; low power pulsed laser; low-temperature-grown Fabry-Perot cavity photoconductors; microwave signals; optical sampling; optical switches; picojoule optical pulses; pulse energy; switching efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.3993
  • Filename
    6457574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=49784