Fabrication of a nonvolatile lookup-table circuit chip using magneto/semiconductor-hybrid structure for an immediate-power-up field programmable gate array

Series connection of metal-oxide semiconductor transistors and spin-injection-writable magneto-resistive junction devices based on logic-in-memory architecture realizes both programmable logic operation and nonvolatile storage function. A lookup table (LUT) circuit in field-programmable gate array fabricated by a 0.14µm magneto/semiconductor-hybrid process achieves area reduction by 2/3 compared to a conventional static random-access-memory-based one, and realizes complete standby power reduction.