Author :
Shin, Dongsuk ; Na, Kwang-Jin ; Kwon, Daehan ; Kang, Jong-Ho ; Song, Taeksang ; Jung, Ho-Don ; Lee, Woo-Young ; Park, Ki-Chon ; Park, Jung-Hoon ; Joo, Yong-Suk ; Cha, Jae-Hoon ; Jung, Youngho ; Kim, Youngran ; Han, Donghoon ; Choi, Byoung-Jin ; Lee, Geun-
Author_Institution :
Graphics Memory Design Team, Hynix Semiconductor Inc., Icheon, Korea
Abstract :
A 7Gb/s 1Gb GDDR5 DRAM is implemented in a 54nm DRAM process. In order to improve data valid window at high speed interface, it employs a duty-cycle corrector (DCC) which achieves wide-range and fast-lock time by utilizing an anti-harmonic asynchronous binary search (ABS) circuit, as well as optimizes capability of duty-cycle correction by using offset-tolerant duty-cycle detection scheme. The acceptable range of the DCC is ±100ps and the corrected duty-cycle is 50% ± 6ps. The DCC operates over a wide frequency range from 0.8GHz to 3.5GHz and consumes 4.5mW at 3.5GHz using a 1.5V supply voltage.