DocumentCode
498028
Title
A 0.45–0.7V sub-microwatt CMOS image sensor for ultra-low power applications
Author
Hanson, Scott ; Sylvester, Dennis
Author_Institution
University of Michigan, Ann Arbor, USA
fYear
2009
fDate
16-18 June 2009
Firstpage
176
Lastpage
177
Abstract
This work describes a low voltage CMOS image sensor with a pulsewidth modulation read-out that is optimized for ultra-low power wireless applications. A new pixel structure targeted at low voltage operation is implemented in a 128×128 pixel test-chip in a 0.13µm technology. Measurements show that the image sensor is functional over the range Vdd =0.45V−0.7V. At Vdd =0.5V, the image sensor consumes 140nJ/frame at 8.5fps with a signal-to-noise ratio of 23.4dB at saturation.
Keywords
CMOS image sensors; Counting circuits; Image sensors; Low voltage; Performance evaluation; Photodiodes; Pulse width modulation; Signal to noise ratio; Switches; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2009 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
978-1-4244-3307-0
Electronic_ISBN
978-4-86348-001-8
Type
conf
Filename
5205394
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