Title :
DC and RF characteristics of In0.52Al0.48As/In0.7Ga0.3As HEMTs at 300 and 16 K
Author :
Endoh, Akira ; Watanabe, Issei ; Mimura, Takashi ; Matsui, Takashi
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
Abstract :
Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs have been fabricated in the gate length Lg range of 50 to 700 nm and their DC and RF characteristics measured at 300 and 16 K. The maximum drain-source current Ids, the maximum transconductance gm_max and the cutoff frequency fT values increased at 16 K as expected. The ratios gm_max(16 K)/gm_max(300 K) and fT(16 K)/fT(300 K) decreased with decreasing Lg, which results from the enhancement of the ballistic transport of electrons.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; DC characteristics; In0.52Al0.48As-In0.7Ga0.3As; RF characteristics; ballistic electron transport; cutoff frequency; maximum drain-source current; pseudomorphic HEMT; size 50 nm to 700 nm; temperature 16 K; temperature 300 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.4180
