Title :
A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
Author :
Hossain, M. ; Kraemer, T. ; Ostermay, Ina ; Jensen, T. ; Janke, B. ; Borokhovych, Y. ; Lisker, M. ; Glisic, Savo ; Elkhouly, Mohamed ; Borngraeber, J. ; Tillack, Bernd ; Meliani, Chafik ; Krueger, O. ; Krozer, V. ; Heinrich, Wolfgang
Author_Institution :
Ferdinand-Braun-Inst. (FBH), Berlin, Germany
Abstract :
A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in transferred-substrate InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level bonding process. The VCO operates at 82 GHz with 6 dBm output power and the combined circuit delivers -10 dBm at 246 GHz, with a phase noise of -87 dBc/Hz at 2 MHz offset. To the knowledge of the authors, this is the first hetero-integrated signal source in this frequency range reported so far. The results illustrate the potential of the hetero integrated process for sub-mm-wave frequencies.
Keywords :
BiCMOS integrated circuits; III-V semiconductors; MMIC; frequency multipliers; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; voltage-controlled oscillators; wafer bonding; BiCMOS MMIC; InP; InP-on-BiCMOS technology; VCO; frequency 2 MHz; frequency 246 GHz; frequency 82 GHz; frequency tripler; hetero integrated process; hetero-integrated frequency source; sub-mm-wave frequencies; transferred-substrate InP-HBT technology; voltage controlled oscillator; wafer-level bonding process; BiCMOS integrated circuits; Frequency measurement; Harmonic analysis; Indium phosphide; Power generation; Power measurement; Voltage-controlled oscillators; Frequency multipliers; InP-DHBT; SiGe-BiCMOS; frequency tripler; hetero-integration; transferred-substrate (TS); voltage controlled oscillator (VCO);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2316220
