Stress-induced leakage current in CNT-MOSFETs using simplified quantitative model

The stress-induced leakage current (SILC) in carbon nanotube (CNT)-MOSFETs based on a previously developed model for the steady-state component of SILC across the ultra-thin gate oxide of a MOS capacitor is calculated. It was found that the contribution of the component due to SILC in the gate current of MOSFETs must not be neglected. It was also found that SILC is larger in the source side than in the drain side.