DocumentCode
499199
Title
Efficiency enhancement of GaN/InGaN vertical-injection light emitting diodes using distinctive indium-tin-oxide nanorods
Author
Yang, C.S. ; Yu, Peichen ; Chiu, C.H. ; Chang, C.H. ; Kuo, H.C.
Author_Institution
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350 mA.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; GaN-InGaN; distinctive indium-tin-oxide nanorods; injection current; vertical-injection light emitting diodes; Displays; Gallium nitride; Indium tin oxide; Light emitting diodes; Nanostructured materials; Optical arrays; Optical films; Optical surface waves; Sputtering; Substrates; 220.4241; 230.3670;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5224278
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