Title :
Nanorod light emitting diode arrays with highly concentrated radiation profile and strain relaxed structure
Author :
Chen, Liang-Yi ; Huang, Ying-Yuan ; Lin, Pei-Hsuan ; Ke, Min-Yung ; Jianjang Huang
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We have developed a natural lithography method to fabricate nanorod structure. The spin-on glass is used as a space layer to realize the nanorod LED. The strain is released in nanorod structured LED which is indicated by their nearly constant electroluminescent peak wavelength at the injection current range between 25 mA and 100 mA. Furthermore, a highly concentrated radiation profile is observed from the nanorod LED array. We suggest a light guided concept to explain the narrow radiation phenomena.
Keywords :
III-V semiconductors; electroluminescent devices; gallium compounds; light emitting diodes; lithography; nanostructured materials; stress relaxation; wide band gap semiconductors; GaN; constant electroluminescence; current 25 mA to 100 mA; light guided concept; nanorod light emitting diode array; narrow radiation phenomena; natural lithography method; radiation profile; spin-on-glass; strain relaxed structure; Capacitive sensors; Dry etching; Gallium nitride; Glass; Gold; Light emitting diodes; Lithography; Nanostructures; Optical arrays; Optical buffering; (220.4241) Nanostructure fabrication; (230.3670) Light-emitting diodes;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
