Nanorod light emitting diode arrays with highly concentrated radiation profile and strain relaxed structure

Author

Chen, Liang-Yi ; Huang, Ying-Yuan ; Lin, Pei-Hsuan ; Ke, Min-Yung ; Jianjang Huang

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We have developed a natural lithography method to fabricate nanorod structure. The spin-on glass is used as a space layer to realize the nanorod LED. The strain is released in nanorod structured LED which is indicated by their nearly constant electroluminescent peak wavelength at the injection current range between 25 mA and 100 mA. Furthermore, a highly concentrated radiation profile is observed from the nanorod LED array. We suggest a light guided concept to explain the narrow radiation phenomena.

Keywords

III-V semiconductors; electroluminescent devices; gallium compounds; light emitting diodes; lithography; nanostructured materials; stress relaxation; wide band gap semiconductors; GaN; constant electroluminescence; current 25 mA to 100 mA; light guided concept; nanorod light emitting diode array; narrow radiation phenomena; natural lithography method; radiation profile; spin-on-glass; strain relaxed structure; Capacitive sensors; Dry etching; Gallium nitride; Glass; Gold; Light emitting diodes; Lithography; Nanostructures; Optical arrays; Optical buffering; (220.4241) Nanostructure fabrication; (230.3670) Light-emitting diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224279