Title :
Gigabit/s modulation of twin-electrode high-brightness tapered laser with high modulation efficiency
Author :
Kwok, C.H. ; Xia, M. ; Penty, R.V. ; White, I.H. ; Ruiz, M. ; Michel, N. ; Krakowski, M. ; Calligaro, M. ; Lecomte, M. ; Parillaud, O.
Author_Institution :
Eng. Dept., Univ. of Cambridge, Cambridge, UK
Abstract :
Simultaneous high modulation speed and high modulation efficiency operation of a two-electrode tapered laser is reported. 1 Gb/s direct data modulation is achieved with 68 mA applied current swing for a 0.95 W output optical modulation amplitude.
Keywords :
III-V semiconductors; electro-optical modulation; gallium compounds; indium compounds; quantum well lasers; GaInAs; bit rate 1 Gbit/s; current 68 mA; current swing; direct data modulation; high-modulation efficiency; optical modulation amplitude; power 0.95 W; quantum well laser; twin-electrode high-brightness tapered laser; Amplitude modulation; Bandwidth; Coatings; High speed optical techniques; Laser excitation; Modulation coding; Optical modulation; Power lasers; Reflectivity; Semiconductor lasers; (060.4080) Modulation; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
