Title :
Terahertz open-aperture Z-scan in doped InGaAs
Author :
Razzari, L. ; Su, F.H. ; Sharma, G. ; Blanchard, F. ; Ayesheshim, A. ; Bandulet, H-C ; Morandotti, R. ; Kieffer, J-C ; Ozaki, T. ; Reid, M. ; Hegmann, F.A.
Author_Institution :
INRS-EMT, Univ. du Quebec, Varennes, QC, Canada
Abstract :
We have performed open-aperture Z-scan measurements on n-doped InGaAs using intense few-cycle terahertz pulses. We observe a significant bleaching of the terahertz pulse absorption attributed to terahertz-electric-field-induced intervalley carrier scattering.
Keywords :
indium compounds; light absorption; light scattering; terahertz spectroscopy; InGaAs; Z-scan; bleaching; intense few-cycle terahertz pulses; terahertz open-aperture; terahertz pulse absorption; terahertz-electric-field-induced intervalley carrier scattering; Bleaching; Electrons; Indium gallium arsenide; Nonlinear optics; Optical films; Optical pulses; Optical scattering; Spectroscopy; Substrates; Ultrafast optics; (300.6420) Spectroscopy, nonlinear; (300.6495) Spectroscopy, terahertz; (300.6500) Spectroscopy, time-resolved;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
