Dynamic of the optical matrix element in type II GaAsSb/GaAs quantum dots for laser applications

Author

Ochalski, Tomasz J. ; Gradkowski, Kamil ; Pavarelli, Nicola ; Willams, David P. ; Reilly, Eoin P O ; Huyet, Guillaume ; Tatebayashi, Jun ; Huffaker, Diana L.

Author_Institution

Tyndall Nat. Inst., Cork, Ireland

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We present time resolved photoluminescence supported by kldrp modeling of type II quantum dots. In the measured spectra two effects were observed; an initially fast decay time rises dramatically as the number of carriers is depleted, which reduces the optical matrix element, and at the same time, a strong red shift of the emission wavelength is observed.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; photoluminescence; quantum dot lasers; red shift; semiconductor quantum dots; GaAsSb-GaAs; emission wavelength; laser applications; optical matrix element; red shift; time resolved photoluminescence; type II quantum dots; Carrier confinement; Charge carrier processes; Electron optics; Gallium arsenide; Laser applications; Optical pulses; Photoluminescence; Quantum dot lasers; Quantum dots; Time measurement; (230.5590) Quantum-well, -wire and -dot devices; (300.6500) Spectroscopy, time-resolved;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224467