Title :
Polarized Raman modes of a single wurtzite GaAs needle
Author :
Crankshaw, S. ; Moewe, M. ; Chuang, L.C. ; Chen, R. ; Chang-Hasnain, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
We report the polarization properties of Raman scattering in a single wurtzite GaAs nanoneedle. Micro-Raman measurements are performed with varying incident and scattered light polarizations, affecting the relative intensities of the observed zone-center phonon lines.
Keywords :
III-V semiconductors; Raman spectra; Raman spectroscopy; gallium arsenide; light polarisation; nanostructured materials; GaAs; micro-Raman measurement; polarized Raman mode; scattered light polarization; single wurtzite GaAs nanoneedle; zone center phonon lines; Gallium arsenide; Geometrical optics; Light scattering; Needles; Optical materials; Optical polarization; Optical scattering; Performance evaluation; Phonons; Raman scattering; (160.1190) Anisotropic optical materials; (160.6000) Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
