• DocumentCode
    499464
  • Title

    Ultra-low-threshold GaSb-based laser diodes at 2.65 µm

  • Author

    Kashani-Shirazi, K. ; Bachmann, A. ; Arafin, S. ; Vizbaras, K. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present the design and results of a continuous wave room temperature operating GaSb-based edge emitter at 2.65 mum with threshold current densities as low as 50 A/cm2 (L rarrinfin).
  • Keywords
    III-V semiconductors; gallium compounds; semiconductor lasers; GaSb; edge emitter; laser diodes; temperature 293 K to 298 K; threshold current density; wavelength 2.65 mum; Diode lasers; (140.5960) Semiconductor lasers; (300.6360) Spectroscopy, laser;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5224549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=499464