Title :
Ultra-low-threshold GaSb-based laser diodes at 2.65 µm
Author :
Kashani-Shirazi, K. ; Bachmann, A. ; Arafin, S. ; Vizbaras, K. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
We present the design and results of a continuous wave room temperature operating GaSb-based edge emitter at 2.65 mum with threshold current densities as low as 50 A/cm2 (L rarrinfin).
Keywords :
III-V semiconductors; gallium compounds; semiconductor lasers; GaSb; edge emitter; laser diodes; temperature 293 K to 298 K; threshold current density; wavelength 2.65 mum; Diode lasers; (140.5960) Semiconductor lasers; (300.6360) Spectroscopy, laser;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
