Title :
High-power optically pumped semiconductor laser
Author :
Wang, Tsuei-Lian ; Kaneda, Yushi ; Yarborough, J.M. ; Hader, Jörg ; Moloney, Jerome V. ; Koch, Stephan ; Kunert, Bernardette ; Stoltz, Wolfgang
Author_Institution :
Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA
Abstract :
We report 23 W output from optically pumped semiconductor laser in a near-diffraction limited beam using one OPSL chip in the resonator. The OPSL device needs no antireflective coating, and exploits the strong subcavity gain enhancement.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical pumping; semiconductor lasers; GaAs; InGaAs-GaAs; OPSL resonator; high-power optically pumped semiconductor laser; near-diffraction limited beam; power 22 W; single-chip OPSL; subcavity gain enhancement; Couplings; Laser beams; Laser excitation; Optical pumping; Optical resonators; Power generation; Power lasers; Pump lasers; Resonance; Semiconductor lasers; (140.3480) Lasers, diode-pumped; (140.3580) Lasers, solid-state;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
