DocumentCode :
499529
Title :
The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes
Author :
Ee, Yik-Khoon ; Kumnorkaew, Pisist ; Arif, Ronald A. ; Tong, Hua ; Gilchrist, James F. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
Novel approach to improve light extraction efficiency of InGaN-based light emitting diodes with polydimethylsiloxane concave microstructures arrays was demonstrated, which leads to enhancement of extraction efficiency by 1.60-times in good agreement with simulation.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; polymers; quantum well devices; wide band gap semiconductors; InGaN; light extraction efficiency; polydimethylsiloxane concave microstructures arrays; quantum wells light-emitting diodes; Computational modeling; Lenses; Light emitting diodes; Microoptics; Microstructure; Optical arrays; Optical refraction; Optical scattering; Optical variables control; Stimulated emission; (230.0250) Optoelectronics; (230.3670) Light-Emitting Diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5224614
Link To Document :
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