Title :
Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode
Author :
Ee, Yik-Khoon ; Biser, Jeff ; Cao, Wanjun ; Chan, Helen M. ; Vinci, Richard P. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Nanoheteroepitaxy of InGaN-based light-emitting diodes on patterned AGOG sapphire by using abbreviated growth mode, leads to significant reduction in dislocation density and 24% increase in efficiency.
Keywords :
III-V semiconductors; dislocation density; epitaxial growth; gallium compounds; indium compounds; light emitting diodes; nanopatterning; quantum well devices; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; AGOG sapphire substrate; Al2O3; InGaN; abbreviated growth mode; dislocation density; light-emitting diodes; nanoheteroepitaxy; nanopatterning; quantum well growth; Annealing; Epitaxial growth; Etching; Gallium nitride; Light emitting diodes; Nanoscale devices; Nanostructures; Optical buffering; Substrates; Temperature; (230.0250) Optoelectronics; (230.3670) Light-Emitting Diodes;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
