Silicon single-photon detector with 5 Hz dark counts

Author

Kim, Yong-Su ; Makarov, Vadim ; Jeong, Youn-Chang ; Kim, Yoon-Ho

Author_Institution

Dept. of Phys., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We report operation of a passively quenched silicon single-photon avalanche photodiode (SPAD) at extremely low dark count rate of 5 Hz. This was achieved by lowering the temperature of a PerkinElmer C30921S SPAD down to -77degC. We found that the quantum efficiency at 780 nm remained constant over a wide range of cooling temperatures from -32degC down to -77degC. The after-pulsing characteristics, however, depended on the cooling temperature.

Keywords

avalanche photodiodes; elemental semiconductors; photodetectors; photon counting; radiation quenching; silicon; PerkinElmer C30921S SPAD; Si; cooling temperature; frequency 5 Hz; low-dark count rate; passively quenched SPAD; quantum efficiency; silicon single-photon detector; single-photon avalanche photodiode; temperature -32 degC to -77 degC; wavelength 780 nm; Avalanche photodiodes; Cooling; Costs; Detectors; Optical pulse generation; Packaging; Pulse measurements; Silicon; Temperature dependence; Temperature distribution; (040.1345) Avalanche photodiodes (APDs); (270.5570) Quantum detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224894