DocumentCode
499714
Title
Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate
Author
Rodriguez, J.B. ; Cerutti, L. ; Tournié, E.
Author_Institution
Inst. d´´Electron. du Sud (IES), Univ. Montpellier 2, Montpellier, France
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We report on the fabrication and characterization of mid-infrared Sb-based lasers grown on Silicon substrates. We demonstrate room-temperature operation with low threshold current densities (~1.5 kA/cm2), and pulsed mode up to a duty-cycle of 10%.
Keywords
current density; elemental semiconductors; quantum well lasers; silicon; Sb-based mid-infrared multi-quantum-well structure; Si; laser operation; low threshold current densities; silicon substrate; Gas lasers; Laser modes; Molecular beam epitaxial growth; Optical device fabrication; Optical materials; Optical pulses; Semiconductor lasers; Silicon; Substrates; Threshold current; (250.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225070
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