Title :
Thin film p-ridge n-stripe III–V laser broad area metal-metal bonded to silicon
Author :
Palit, Sabarni ; Kirch, J. ; Mawst, L. ; Kuech, T. ; Jokerst, N.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
Abstract :
A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; metallisation; optical films; quantum well lasers; semiconductor thin films; silicon; wide band gap semiconductors; InGaAs-GaAs-GaAsP; Si; broad area single quantum well thin film laser; metal-metal bonding; silicon; thermal dissipation; thin film p-ridge n-stripe III-V laser; threshold current density; Bonding; Etching; Gallium arsenide; III-V semiconductor materials; Quantum well lasers; Semiconductor lasers; Semiconductor thin films; Silicon; Substrates; Threshold current; (250.5960) Semiconductor lasers; (310.6845) Thin Film Devices and applications;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
