DocumentCode
499864
Title
Critical coupling to surface phonon-polaritons in SiC
Author
Neuner, Burton, III ; Korobkin, Dmitriy ; Fietz, Chris ; Carole, Davy ; Ferro, Gabriel ; Shvets, Gennady
Author_Institution
Dept. of Phys., Univ. of Texas at Austin, Austin, TX, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We observe critically coupled surface phonon-polariton excitation in SiC, leading to maximum electric field enhancement. A double-scan of wavelength and incidence angle in the ATR configuration demonstrates critical coupling for two air gaps.
Keywords
air gaps; polaritons; silicon compounds; surface phonons; wide band gap semiconductors; ATR configuration; SiC; air gaps; critical coupling; double-scan; incidence angle; maximum electric field enhancement; surface phonon-polaritons; Air gaps; Frequency; Laser excitation; Laser theory; Optical coupling; Optical reflection; Optical surface waves; Reflectivity; Silicon carbide; Surface waves; (240.5420) Polaritons; (240.6690) Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225228
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