DocumentCode :
499918
Title :
Recent progress in electrically pumped blue GaN-based VCSELs
Author :
Wang, Shing-Chung ; Lu, Tien-Chang ; Kuo, Hao-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
Recent progress on fabrication technology and demonstration of current injection GaN-based blue VCSELs are presented. Performance of current injection blue VCSELs with threshold current of 1.4 mA and emission wavelength of 462 nm are described.
Keywords :
III-V semiconductors; gallium compounds; laser cavity resonators; optical fabrication; semiconductor lasers; spontaneous emission; surface emitting lasers; wide band gap semiconductors; GaN; continuous-wave laser; current 1.4 mA; current injection VCSEL; electrically pumped blue laser; fabrication technology; spontaneous emission; vertical-cavity surface-emitting laser; wavelength 462 nm; Distributed Bragg reflectors; Gallium nitride; Indium tin oxide; Optical buffering; Optical device fabrication; Optical pumping; Optical superlattices; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.7270) Vertical emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225288
Link To Document :
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