Title :
The differential efficiency of InP quantum dot lasers
Author :
Edwards, Gareth T. ; Smowton, Peter M.
Author_Institution :
Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
We demonstrate the origin of, and quantify the contributions to, the poor external differential efficiency we observe in InP quantum dot lasers. Injection efficiency limits the internal differential quantum efficiency to 50%.
Keywords :
III-V semiconductors; indium compounds; quantum dot lasers; InP; external differential efficiency; injection efficiency; internal differential quantum efficiency; quantum dot laser; Indium phosphide; Laser modes; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Stationary state; Stimulated emission; Threshold current; (250.5590) Quantum-well, -wire and -dot devices; (250.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
