Title :
Laterally intermixed quantum structure for carrier confinement of VCSELs
Author :
Sugawara, Yuta ; Miyamoto, Tomoyuki
Author_Institution :
P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Quantum structure intermixing from lateral direction of the mesa sidewall is proposed for VCSELs. Ith decrease of 70% and etad increase of 75% were achieved by suppression of the surface recombination in the post-type VCSEL.
Keywords :
laser cavity resonators; surface emitting lasers; surface recombination; carrier confinement; laterally intermixed quantum structure; mesa sidewall; post-type VCSEL; surface recombination suppression; vertical cavity surface emitting lasers; Carrier confinement; Distributed Bragg reflectors; Fabrication; Optical films; Optical interconnections; Optical sensors; Photonic band gap; Radiative recombination; Surface emitting lasers; Vertical cavity surface emitting lasers; (230.4000) Microstructure fabrication; (250.7260) Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
