Title :
Four-well highly strained Quantum Cascade Lasers grown by metal-organic chemical vapor deposition
Author :
Hsu, Allen ; Hu, Qing ; Williams, Benjamin
Author_Institution :
Res. Lab. of Electron., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga0.35In0.65As/Al0.70In0.30As (0.8/-1.5%) quantum wells.
Keywords :
MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum cascade lasers; GaInAs-AlInAs; four-well injectorless design; highly strained quantum cascade laser; highly strained quantum wells; lasing threshold; metal-organic chemical vapor deposition; temperature 293 K to 298 K; wavelength 5.5 mum; Capacitive sensors; Chemical vapor deposition; Electrons; Indium phosphide; Laboratories; Low voltage; Power measurement; Quantum cascade lasers; Sputter etching; Temperature; (140.5965) Semiconductor lasers, quantum cascade;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
