Title :
Recent advances in all-epitaxial growth and properties of orientation-patterned gallium arsenide (OP-GaAs)
Author :
Schunemann, P.G. ; Pomeranz, L.A. ; Young, Y.E. ; Mohnkern, L. ; Vera, A.
Author_Institution :
BAE Syst., Nashua, NH, USA
Abstract :
We report on all-epitaxial growth of large diameter (3-inch), large aperture (>1.5 mm thick), low-loss (<0.005 cm-1) QPM GaAs. 2-mum-laser-pumped OPO performance was comparable to that of ZnGeP2.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; optical materials; optical parametric oscillators; optical pumping; semiconductor growth; vapour phase epitaxial growth; GaAs; all-epitaxial growth; hybrid vapour phase epitaxy; laser-pumped OPO; low-loss QPM; metal organic chemical vapour deposition; optical parametric oscillator; orientation-patterned material; quasiphase matched material; Conducting materials; Crystalline materials; Epitaxial growth; Frequency conversion; Gallium arsenide; Molecular beam epitaxial growth; Nonlinear optics; Optical materials; Optical pumping; Thermal conductivity; (190.2620) Frequency Conversion; (190.4400) Nonlinear Optics, materials;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
