Title :
32 Gb/s transmission experiments using high speed 850 nm VCSELs
Author :
Westbergh, Petter ; Gustavsson, Johan S. ; Haglund, Åsa ; Larsson, Anders ; Hopfer, Friedhelm ; Bimberg, Dieter ; Joel, Andrew
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
We demonstrate error free transmission at bit rates up to 32 Gb/s at room temperature and 25 Gb/s at 85degC using a 9 mum oxide aperture 850 nm VCSEL. The VCSEL design is optimized for high speed operation by minimizing parasitics, reducing self-heating, and using strained InGaAs quantum wells to improve differential gain.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; laser cavity resonators; optical transmitters; quantum well lasers; surface emitting lasers; InGaAs; bit rate 25 Gbit/s; bit rate 32 Gbit/s; differential gain; error free transmission; high-speed VCSEL; optical design optimisation; oxide aperture VCSEL; quantum well laser; temperature 293 K to 298 K; temperature 85 degC; vertical cavity surface emitting laser; wavelength 850 nm; Apertures; Bit rate; Current density; Distributed Bragg reflectors; Epitaxial layers; Fabrication; Indium gallium arsenide; Optical attenuators; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
