Title :
“HVPE InGaN for LEDs- State of the art and horizons”
Author :
Syrkin, Alexander L.
Author_Institution :
TDI. Inc., Silver Spring, MD, USA
Abstract :
We will discuss results of InGaN material and device growth by HVPE. Application of new device concepts for LEDs arising from new HVPE capabilities will be discussed, including all-HVPE InGaN based LEDs for SSL.
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; semiconductor growth; wide band gap semiconductors; HVPE; InGaN; LED; SSL; device growth; state of the art; Chemical analysis; Chemical technology; Crystalline materials; Crystallization; Gallium nitride; Indium; Light emitting diodes; Molecular beam epitaxial growth; Temperature distribution; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
