DocumentCode
500092
Title
Making a direct electrical contact to InGaN/GaN nanorod LEDs: High output power density
Author
Lee, Ya-Ju ; Lin, Shawn-Yu ; Chiu, Ching-Hua ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We realize a new scheme for making a direct contact to a two-dimensional (2D) nanorod LED array using the oblique-angle deposition. More importantly, we demonstrate highly efficient carrier injection into the nanorods.
Keywords
III-V semiconductors; electrical contacts; gallium compounds; indium compounds; light emitting diodes; nanophotonics; nanostructured materials; wide band gap semiconductors; InGaN-GaN; electrical contact; highly efficient carrier injection; nanorod light emitting diode; oblique-angle deposition; two-dimensional nanorod LED array; Contacts; Gallium nitride; Indium tin oxide; LED lamps; Light emitting diodes; Nickel; Physics; Power generation; Quantum well devices; Space technology; (230.3670);
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225471
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