Title :
Fabry-Perot measurements of InAs/GaAs quantum dots
Author :
Metcalfe, M. ; Solomon, G.S. ; Lawall, J.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A scanning Fabry-Perot cavity is used to measure the photoluminescence of InAs/GaAs self-assembled quantum dots with linewidths as low as 1 GHz. This cavity is subsequently locked to the dot emission using PI control.
Keywords :
Fabry-Perot interferometers; III-V semiconductors; distributed Bragg reflectors; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; InAs-GaAs; PI control; photoluminescence; scanning Fabry-Perot cavity; self-assembled quantum dots; Distributed Bragg reflectors; Fabry-Perot; Fluorescence; Gallium arsenide; Laser excitation; Pulse measurements; Quantum dot lasers; Quantum dots; Spectroscopy; Voltage; (050.2230) Fabry-Perot; (230.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
