Title :
Near infrared silicon quantum dots MOSFET detector
Author :
Shieh, Jia-Min ; Yu, Wen-Chien ; Wang, Chao-Kei ; Dai, Bau-Tong ; Kuo, Hao-Chung ; Huang, Jung Y. ; Pan, C-Ling
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths lambda=1.55 mum, photoresponse as high as 2.0 A/W was measured.
Keywords :
MOSFET; lighting; photodetectors; semiconductor quantum dots; silicon; MOSFET detector; MOSFET photodetector; Si; gate dielectric stack; illumination; near infrared silicon quantum dots; optical telecommunication wavelengths; photoresponse; wavelength 1.55 mum; Dielectric measurements; Infrared detectors; Lighting; MOSFET circuits; Optical films; Photodetectors; Quantum dots; Semiconductor films; Silicon; Wavelength measurement; (040.5160) Photodetectors; (230.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
