Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

Author

Shields, Philip A. ; Lis, Szymon ; Lee, Tom ; Allsopp, Duncan W E ; Charlton, Martin D.B. ; Zoorob, Majd E. ; Wang, Wang N.

Author_Institution

Univ. of Bath, Bath, UK

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

Keywords

III-V semiconductors; finite difference time-domain analysis; gallium compounds; integrated optics; light emitting diodes; light scattering; photonic crystals; Al₂O₃; GaN-Al₂O₃; GaN-on-sapphire light-emitting diodes; finite difference time domain modeling; guided mode absorption; light extraction; optical absorption; optical scattering; photonic crystal light-emitting diodes; substrate-epilayer interface; Absorption; Etching; Finite difference methods; Light emitting diodes; Lithography; Optical scattering; Optical surface waves; Photonic crystals; Stimulated emission; Substrates; (050.5298) Photonic crystals; (230.3670) Light-emitting diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225533