Title :
Photoluminescence enhancement by metal nanoparticles
Author :
Sun, G. ; Khurgin, J.B.
Author_Institution :
Dept. of Phys., Univ. of Massachusetts Boston, Boston, MA, USA
Abstract :
We have developed a simple yet rigorous theory of the enhancement of photoluminescence (PL) efficiency in the vicinity of metal nanoparticles that takes into account the enhancement during optical absorption and emission. Using an example of active InGaN quantum dots (QDs) positioned in close proximity to Ag nanospheres embedded in GaN, we show that strong enhancement can be obtained only for those QDs, atoms, or molecules that are originally inefficient in absorbing as well as in emitting optical energy.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; nanoparticles; photoluminescence; semiconductor quantum dots; InGaN; nanospheres; optical energy; photoluminescence; quantum dots; Absorption; Atom optics; Frequency measurement; Gallium nitride; Nanoparticles; Optical sensors; Photoluminescence; Plasmons; Quantum dots; Stimulated emission; (230.0040) Detectors; (240.6680) Surface plasmons;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
