High-index-contrast buried-waveguide for intersubband ultrafast all-optical switches fabricated by wafer bonding technology

Author

Akita, K. ; Akimoto, R. ; Cong, G.W. ; Hasama, T. ; Ishikawa, H.

Author_Institution

Network Photonics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We fabricated high-index-contrast II-VI-based multiple-quantum-well channel-waveguides buried in a SiO₂ cladding-layer, for the application to intersubband transition all-optical-switches at communication wavelengths. We demonstrated the sub-picosecond switching of the waveguides using intersubband absorption saturation recovery.

Keywords

II-VI semiconductors; high-speed optical techniques; optical fabrication; optical saturable absorption; optical switches; optical waveguides; quantum well devices; semiconductor quantum wells; silicon compounds; wafer bonding; SiO₂; high-index-contrast buried-waveguide; intersubband absorption saturation recovery; intersubband transition; multiple-quantum-well channel-waveguide; optical fabrication; sub-picosecond switching; ultrafast all-optical switches; wafer bonding technology; Absorption; Gallium arsenide; Optical fiber communication; Optical waveguides; Quantum well devices; Sputter etching; Substrates; Switches; Wafer bonding; Zinc compounds; (230.4320) General; (230.5590);

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225587