Title :
Recombination dynamics of photogenerated carriers in 10.4 µm-cutoff photodiodes consisting of W-structured superlattices
Author :
Guibao Xu ; Xiaodong Mu ; Ding, Yujie J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We used pump-probe technique to investigate recombination dynamics of photogenerated carriers in photodiodes consisting of InAs/GaInSb W-structured superlattices. Recombination time constants of 1.6 ns and 10 ns were measured under high and low powers, respectively.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; photodiodes; photoluminescence; semiconductor superlattices; InAs-GaInSb; W-structured superlattices; photodiodes; photogenerated carriers; pump-probe technique; recombination dynamics; recombination time constants; time-resolved photoluminescence; wavelength 10.4 mum; Laser beams; Laser excitation; Photodiodes; Photoluminescence; Probes; Radiative recombination; Semiconductor superlattices; Temperature; Time measurement; Wavelength measurement; (160.6000) Semiconductor materials; (230.0250) Optoelectronics; (250.5230) Photoluminescence;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
