Title :
GaSb-based laser diodes operating within spectral range of 2 – 3.5 µm
Author :
Belenky, G. ; Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Chen, J. ; Suchalkin, S.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Abstract :
We present the performance parameters of GaSb-based diode lasers operating in spectral region from 2 to 3.36 mum. CW output power levels of 120 mW at 3 mum, 60 mW at 3.1 mum, and 15 mW at 3.36 mum (285 K) are reported.
Keywords :
gallium compounds; laser beams; semiconductor lasers; CW output power level; GaSb; laser diode performance parameter; power 120 mW; power 15 mW; power 60 mW; spectral range; temperature 285 K; wavelength 2 mum to 3.36 mum; Diode lasers; Gas lasers; Laser excitation; Molecular beam epitaxial growth; Power generation; Pump lasers; Semiconductor lasers; Solid lasers; Temperature distribution; Temperature measurement; 140.2020 Diode lasers; 40.5960 Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
