Title :
Terahertz emission from nonpolar indium nitride
Author :
Metcalfe, Grace D. ; Shen, Hongen ; Wraback, Michael ; Koblmüller, Gregor ; Gallinat, Chad S. ; Speck, James S.
Author_Institution :
Res. Lab., Sensors & Electron Devices Directorate, U.S. Army, Adelphi, MD, USA
Abstract :
We present terahertz emission from nonpolar InN due to carrier transport in stacking fault-related internal in-plane electric fields. Evidence of in-plane transport is observed as a terahertz waveform polarity flip with reversal of the c-axis.
Keywords :
III-V semiconductors; indium compounds; optical materials; stacking faults; terahertz wave spectra; terahertz waves; wide band gap semiconductors; InN; carrier transport; nonpolar indium nitride; terahertz emission; Acceleration; Gallium nitride; Indium; Molecular beam epitaxial growth; Optical materials; Optical pumping; Polarization; Semiconductor materials; Stacking; Stimulated emission; (160.6000) Semiconductor materials; (320.7120) Ultrafast phenomena;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
