DocumentCode
500279
Title
Terahertz emission from nonpolar indium nitride
Author
Metcalfe, Grace D. ; Shen, Hongen ; Wraback, Michael ; Koblmüller, Gregor ; Gallinat, Chad S. ; Speck, James S.
Author_Institution
Res. Lab., Sensors & Electron Devices Directorate, U.S. Army, Adelphi, MD, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We present terahertz emission from nonpolar InN due to carrier transport in stacking fault-related internal in-plane electric fields. Evidence of in-plane transport is observed as a terahertz waveform polarity flip with reversal of the c-axis.
Keywords
III-V semiconductors; indium compounds; optical materials; stacking faults; terahertz wave spectra; terahertz waves; wide band gap semiconductors; InN; carrier transport; nonpolar indium nitride; terahertz emission; Acceleration; Gallium nitride; Indium; Molecular beam epitaxial growth; Optical materials; Optical pumping; Polarization; Semiconductor materials; Stacking; Stimulated emission; (160.6000) Semiconductor materials; (320.7120) Ultrafast phenomena;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225666
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