DocumentCode :
5003
Title :
Mid-Infrared Thermo-Optic Modulators in SoI
Author :
Nedeljkovic, Milos ; Stankovic, Stevan ; Mitchell, Colin J. ; Khokhar, Ali Z. ; Reynolds, Scott A. ; Thomson, David J. ; Gardes, Frederic Y. ; Littlejohns, Callum G. ; Reed, Graham T. ; Mashanovich, Goran Z.
Author_Institution :
Optoelectron. Res. Centre, Univ. of Southampton, Southampton, UK
Volume :
26
Issue :
13
fYear :
2014
fDate :
1-Jul-14
Firstpage :
1352
Lastpage :
1355
Abstract :
We report experimental results for thermo-optic modulators in silicon-on-insulator (SoI) material operating at the wavelength of 3.8 μ m. These devices are based on asymmetric Mach-Zehnder interferometers (MZIs) with aluminum heaters placed above one MZI arm. The SoI rib waveguides with 400-nm Si device layer thickness are used. Devices with conventional straight MZI arm and spiral MZI arm geometries are investigated. Straight-arm MZIs exhibited higher modulation depths, of up to 30.5 dB, whereas spiral-arm MZIs required smaller switching powers, as low as 47 mW. Measured -3 dB bandwidths were up to 23.8 kHz and did not vary significantly with device configuration.
Keywords :
Mach-Zehnder interferometers; geometrical optics; infrared spectra; nanophotonics; optical variables measurement; optical waveguides; rib waveguides; silicon-on-insulator; thermo-optical devices; thermo-optical effects; SOI rib waveguides; aluminum heaters; asymmetric Mach-Zehnder interferometers; bandwidth measurement; gain 30.5 dB; loss -3 dB; midinfrared thermo-optic modulators; power 47 mW; silicon-on-insulator; size 400 nm; spiral MZI arm geometries; wavelength 3.8 mum; Heating; Modulation; Optical device fabrication; Optical switches; Optical waveguides; Silicon; Spirals; Thermo-optic modulator; mid-infrared; optoelectronic devices; photonics; silicon photonics;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2323702
Filename :
6815668
Link To Document :
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