Title :
Broad-area quantum cascade lasers with pulsed output power up to 53 W
Author :
Nolde, J.A. ; Abell, J. ; Kim, M. ; Kim, C.S. ; Vurgaftman, I. ; Meyer, J.R. ; Wang, X.J. ; Fan, J.Y.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
A 3-mm-long, 150-mum-wide broad-area quantum cascade laser (lambda = 4.65 mum) with sidewall corrugations produced a maximum-current-limited pulsed output power of 53 W and wall-plug efficiency of 29.4% from two facets at 80 K. The processing was applied to a structure which employed a Ga0.33In0.67As/Al0.64In0.36As strain-compensated double-phonon design with the injection barrier thinned in order to shorten the carrier transport time and improve the high-current-density characteristics of the device.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical materials; quantum cascade lasers; Ga0.33In0.67As-Al0.64In0.36As; QCL cavity length; broad-area quantum cascade laser; carrier transport time; facets; high-current-density characteristic device; injection barrier; maximum-current-limited pulsed output power; power 53 W; sidewall corrugations; size 150 mum; size 3 mm; strain-compensated double-phonon design; temperature 80 K; wall-plug efficiency; wavelength 4.65 mum; Electrons; Fabry-Perot; Optical pulses; Optical reflection; Optical resonators; Power generation; Power lasers; Quantum cascade lasers; Semiconductor lasers; Threshold current; (140.3070) Infrared and far-infrared lasers; (140.5965) Semiconductor lasers, quantum cascade;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
