Title :
InGaAs quantum well nanoneedles on silicon with long wavelength emission for silicon transparency
Author :
Moewe, Michael ; Chuang, Linus C. ; Crankshaw, Shanna ; Ng, Billy ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
We report novel single-crystalline wurtzite InGaAs/GaAs core-shell quantum well nanoneedles with photoluminescence below the 1.12 eV silicon bandgap, grown on GaAs or Si. This long wavelength enables integration with silicon waveguides and CMOS devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; nanostructured materials; optical waveguides; photoluminescence; quantum well devices; silicon; CMOS device; InGaAs-GaAs; Si; long wavelength emission; photoluminescence; quantum well nanoneedle; silicon transparency; silicon waveguides; single crystalline wurtzite core shell nanoneedle; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Neural networks; Optical devices; Optical films; Optical waveguides; Photoluminescence; Quantum computing; Silicon; (160.4760) Optical properties; (160.6000) Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
