DocumentCode
500335
Title
Performance comparison of bottom and top emitting LWIR (8 µm) LED devices
Author
Das, N.C. ; Chang, W.
Author_Institution
Microphotonics Branch, Army Res. Lab., Adelphi, MD, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
For similar GaSb substrate thickness, flip-chip mount bottom emitting LWIR LED device has higher light intensity than top emitting device. Enhanced emission is attributed to better cooling and reflection of light from anode metal surface of the device.
Keywords
III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; substrates; GaSb; LWIR LED devices; bottom emitting device; flip-chip mount; light intensity; substrate thickness; top emitting device; Anodes; Cooling; Light emitting diodes; Optical devices; Optical reflection; Optical surface waves; Quantum cascade lasers; Stimulated emission; Substrates; Temperature; 06. Optical Materials, Fabrication and Characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225724
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