Title :
Performance comparison of bottom and top emitting LWIR (8 µm) LED devices
Author :
Das, N.C. ; Chang, W.
Author_Institution :
Microphotonics Branch, Army Res. Lab., Adelphi, MD, USA
Abstract :
For similar GaSb substrate thickness, flip-chip mount bottom emitting LWIR LED device has higher light intensity than top emitting device. Enhanced emission is attributed to better cooling and reflection of light from anode metal surface of the device.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; substrates; GaSb; LWIR LED devices; bottom emitting device; flip-chip mount; light intensity; substrate thickness; top emitting device; Anodes; Cooling; Light emitting diodes; Optical devices; Optical reflection; Optical surface waves; Quantum cascade lasers; Stimulated emission; Substrates; Temperature; 06. Optical Materials, Fabrication and Characterization;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
