DocumentCode
500344
Title
Fabrication of GaSb-based DFB lasers for gas sensing
Author
Barrios, P.J. ; Gupta, J.A. ; Lapointe, J. ; Aers, G.C. ; Storey, C.
Author_Institution
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, ON, Canada
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Regrowth-free gain-coupled GaSb-based DFB lasers suitable for gas sensing were fabricated. Threshold currents for 2.4 mum emission of 400 mum-long DFB devices were 45 mA with a total output power of nearly 11 mW in CW operation at 20degC.
Keywords
III-V semiconductors; distributed feedback lasers; gallium compounds; gas sensors; semiconductor lasers; GaSb; current 45 mA; distributed feedback lasers; gas sensing; semiconductor lasers; temperature 20 degC; wavelength 2.4 mum; Distributed feedback devices; Gas lasers; Gratings; Laser feedback; Optical device fabrication; Optical feedback; Optical scattering; Optical sensors; Optical surface waves; Optical waveguides; (140.3490) Lasers, distributed-feedback; (250.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225733
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