Title :
Surface plasmon enhanced emission from InGaN single-quantum-well light emitting diodes
Author :
Fischer, A.J. ; Koleske, D.D. ; Wendt, J.R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Electrically injected surface plasmon LEDs have been demonstrated for InGaN light emitting diodes with emission at 460 nm. A seven times enhancement has been observed at high currents with larger enhancements observed at lower currents.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; surface plasmons; InGaN; electrically injected surface plasmon LED; single-quantum-well light emitting diodes; surface plasmon enhanced emission; wavelength 460 nm; Dielectric constant; Gallium nitride; Laboratories; Light emitting diodes; Luminescence; Photoluminescence; Plasmons; Radiative recombination; Rough surfaces; Surface roughness; (230.3670) Light-emitting diodes; (240.6680) Surface plasmons; (250.5230) Photoluminescence;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
