Title :
Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range
Author :
Revin, D.G. ; Zhang, S.Y. ; Commin, J.P. ; Cockburn, J.W. ; Kennedy, K. ; Krysa, A.B. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
Abstract :
We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.
Keywords :
aluminium compounds; arsenic compounds; gallium arsenide; indium compounds; quantum cascade lasers; InGaAs-AlAsSb-InP; milliwatts peak optical power; quantum cascade lasers; room temperature strain; selective incorporation; wavelength 3 mum to 4 mum; Capacitive sensors; Indium gallium arsenide; Indium phosphide; Optical design; Optical scattering; Power lasers; Quantum cascade lasers; Quantum well lasers; Stimulated emission; Temperature distribution; (140.3070) Infrared and far-infrared lasers; (140.5965) Semiconductor lasers, quantum cascade;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
