• DocumentCode
    500395
  • Title

    Low temperature sensitive, deep-well 4.8 µm emitting quantum cascade semiconductor lasers

  • Author

    Shin, C. ; D´Souza, Meenakshi ; Kirch, J. ; Mawst, L.J. ; Botez, D. ; Vurgaftman, I. ; Meyer, J.R.

  • Author_Institution
    ECE Dept., Univ. of Wisconsin-Madison, Madison, WI, USA
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A quantum-cascade laser design for suppressing carrier leakage from the active region was achieved. For both threshold and slope efficiency the characteristic temperatures, T0 and T1, reach values of 238 K over the 20-60degC range.
  • Keywords
    laser beams; low-temperature techniques; quantum cascade lasers; wave functions; carrier confinement; carrier leakage; laser design; low temperature sensitive laser; quantum cascade semiconductor laser; tapered-conduction-band relaxation; temperature 20 C to 60 C; wavefunctions; wavelength 4.8 mum; Energy states; Laboratories; Mirrors; Optical design; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Temperature distribution; Temperature sensors; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5225787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=500395