Title :
Low temperature sensitive, deep-well 4.8 µm emitting quantum cascade semiconductor lasers
Author :
Shin, C. ; D´Souza, Meenakshi ; Kirch, J. ; Mawst, L.J. ; Botez, D. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution :
ECE Dept., Univ. of Wisconsin-Madison, Madison, WI, USA
Abstract :
A quantum-cascade laser design for suppressing carrier leakage from the active region was achieved. For both threshold and slope efficiency the characteristic temperatures, T0 and T1, reach values of 238 K over the 20-60degC range.
Keywords :
laser beams; low-temperature techniques; quantum cascade lasers; wave functions; carrier confinement; carrier leakage; laser design; low temperature sensitive laser; quantum cascade semiconductor laser; tapered-conduction-band relaxation; temperature 20 C to 60 C; wavefunctions; wavelength 4.8 mum; Energy states; Laboratories; Mirrors; Optical design; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Temperature distribution; Temperature sensors; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
